MS00500 - SEMI MS5 - Test Method for Wafer Bond Strength Measurements

This Test Method enables the determination of the bond strength between two wafers using micro-chevron test structures. Wafer-wafer bonding is a mainstay for microelectromechanical system (MEMS) and three dimensional stacked integrated circuits (3DS-IC) design and fabrication. MEMS components, such as acceleration sensors, gyroscopes, micropumps, or microvalves that are increasingly found in smart automotive and navigation control systems or in medical devices typically use wafer bonding technologies. Due to being subjected to mechanical stresses, the industrial applications of these components require high mechanical strength, low leakage, and high reliability of the wafer-bonded interface. For a knowledge of the strength determining factors (such as fatigue and stress corrosion) of wafer bonding, for quality control, and for the development of new bonding technologies, a method for determining the strength of such bonds is important to producers and users of MEMS devices, of wafer

5x Faster: Thickness Measurements of Wafers and Layers

Accessible determination of die-to-wafer bond strength with the

Bond Strength Testing: Test Name Principle, PDF

Bond Strength Testing: Test Name Principle, PDF

PDF] Test Method for Wafer Bond Strength Measurements using Micro

Bond Strength Testing: Test Name Principle, PDF

schematic explanation of sample preparation for microtensile bond

ASTM D3755, Standard Test Method for Dielectric Breakdown Voltage

Evaluation of test methods for silicon die strength - ScienceDirect

Bond Strength Testing: Test Name Principle, PDF

Wafer bond characterization - Wikipedia

Accessible determination of die-to-wafer bond strength with the